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Analysis of Dopant Distributions in LEC‐InP

Jiang Wei

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Abstract

Abstract It is often important to be able to estimate the concentration of dopant atoms incorporated into InP crystals grown from InP melt of given composition. In this paper we present a simple parameter (G) to revise the commonly used effective distribution coefficient (keff) and the Scheil equation. The results obtained for various dopants and different initial concentrations in LEC‐grown InP ingots are discussed. It is shown that the revised dopant concentration curves tally with the real distributions.

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What this paper is about

Abstract It is often important to be able to estimate the concentration of dopant atoms incorporated into InP crystals grown from InP melt of given composition. In this paper we present a simple parameter (G) to revise the commonly used effective distribution coefficient (keff) and the Scheil equation. The results obtained for various dopants and different initial concentrations in LEC‐grown InP ingots are discussed. It is shown that the revised dopant concentration curves tally with the real distributions.

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Available abstract

Abstract It is often important to be able to estimate the concentration of dopant atoms incorporated into InP crystals grown from InP melt of given composition. In this paper we present a simple parameter (G) to revise the commonly used effective distribution coefficient (keff) and the Scheil equation. The results obtained for various dopants and different initial concentrations in LEC‐grown InP ingots are discussed. It is shown that the revised dopant concentration curves tally with the real distributions.

Key concepts: Dopant, Materials science, Distribution (mathematics), Mineralogy, Doping, Analytical Chemistry (journal), Chemistry, Optoelectronics

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