Satoshi Matsumoto, Toshihiko Ishiyama, Y. Hiraoka, T. Sakai, Toshiaki Yachi, A. Ito, Y. Arimoto
Abstract
The device characteristics of a quasi-SOI power MOSFET were investigated to obtain its optimum device structure. Its short channel effect was larger than the conventional SOI power MOSFET. We analyzed this effect and found a way to suppress it.
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The device characteristics of a quasi-SOI power MOSFET were investigated to obtain its optimum device structure. Its short channel effect was larger than the conventional SOI power MOSFET. We analyzed this effect and found a way to suppress it.
Key concepts: Silicon on insulator, MOSFET, Power MOSFET, Power (physics), Power semiconductor device, Electrical engineering, Materials science, Channel (broadcasting)