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Performance comparison of InP-based PIN diodes for microwave switch applications

Bangkeun Lee, Taeho Kim, Kyounghoon Yang

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Abstract

InP-based PIN diodes having three different epitaxial layer structures, one InGaAs homojunction and two InP/InGaAs heterojunction structures with a different I-layer thickness, have been fabricated and the performance characteristics of the fabricated diodes were characterized and compared for microwave switch applications. Single-pole single-throw (SPST) PIN switches with 50ohm CPW input-output transmission lines were also fabricated to characterize the insertion loss, isolation and power handling capability of the three InP-based PIN diodes

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What this paper is about

InP-based PIN diodes having three different epitaxial layer structures, one InGaAs homojunction and two InP/InGaAs heterojunction structures with a different I-layer thickness, have been fabricated and the performance characteristics of the fabricated diodes were characterized and compared for microwave switch applications. Single-pole single-throw (SPST) PIN switches with 50ohm CPW input-output transmission lines were also fabricated to characterize the insertion loss, isolation and power handling capability of the three InP-based PIN diodes

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Available abstract

InP-based PIN diodes having three different epitaxial layer structures, one InGaAs homojunction and two InP/InGaAs heterojunction structures with a different I-layer thickness, have been fabricated and the performance characteristics of the fabricated diodes were characterized and compared for microwave switch applications. Single-pole single-throw (SPST) PIN switches with 50ohm CPW input-output transmission lines were also fabricated to characterize the insertion loss, isolation and power handling capability of the three InP-based PIN diodes

Key concepts: Homojunction, Optoelectronics, Materials science, PIN diode, Diode, Microwave, Gallium arsenide, Indium phosphide

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