Resonance-tunneling diode with the tunnel anode (RTDTA)

A high-frequency diode is present for microwave application in the mm-wave band. The proposed diode employs a resonant tunneling structure n++-n+-D-n-D-n+-p+,with a generated p+-n+ junction near the anode. n++-n+ represents the cathode (negative bias), n+-D-n-D-n+ represents the resonant-tunneling diode, and n+-p+ a tunnel diode connected in a direct direction (positive date bias on p+). The diode can represent a structure with two tunnel contacts p+-n+-D-n-D-n+-p+. In this case, the tunnel junction on the cathode (p+-n+) is negative biased and the tunnel diode on the anode n+-p+ is positive biased. The cathode tunnel junction current is unlimited. The anode tunnel diode will define the current through the structure. The results show structure characteristics which are distinct from both tunnel diode characteristics and resonant-tunneling diode characteristics.