2002•Unpublished venueRequires access

Transmission electron microscopy of high threshold voltage, high contact resistance, and high sheet resistance of MOS device

T. T. Sheng, Chih Hang Tung, J.L.F. Wang

Abstract

Transmission electron microscopic examination (TEM) on VLSI process device is presented. Local step coverage and non-uniformity on silicidation has induced high sheet resistance and high contact resistance problems. Native oxide within submicron contacts also increases contact resistivity.

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Available abstract

Key concepts: Contact resistance, Sheet resistance, Materials science, Transmission electron microscopy, Optoelectronics, Electrical contacts, Transmission (telecommunications), Oxide