ScholarLens Back to search
2010•IEEE Microwave and Wireless Components LettersRequires access

An Ultra-Wideband Balun Using Multi-Metal GaAs MMIC Technology

Xing Lan, F. Fong, M. Kintis, Keith Kono, Derrick Yamauchi, Wen-Ben Luo, D. Farkas

Open publisher page 19 citations

Abstract

In this paper, we demonstrate an ultra-wideband MMIC Marchand balun that utilizes a two-layer benzocyclobutene (BCB) GaAs MMIC process with a total of 4 metal layers. This multi-metal technology is built upon a standard GaAs HEMT technology with full compatibility. The fabricated balun achieved an approximately 11:1 bandwidth from 2 to 22 GHz, with less than 3-degree maximum phase imbalance, and less than 1 dB maximum amplitude imbalance. To our knowledge, this is the largest bandwidth ratio ever reported for an MMIC Marchand balun.

About this research paper

What this paper is about

In this paper, we demonstrate an ultra-wideband MMIC Marchand balun that utilizes a two-layer benzocyclobutene (BCB) GaAs MMIC process with a total of 4 metal layers. This multi-metal technology is built upon a standard GaAs HEMT technology with full compatibility. The fabricated balun achieved an approximately 11:1 bandwidth from 2 to 22 GHz, with less than 3-degree maximum phase imbalance, and less than 1 dB maximum amplitude imbalance. To our knowledge, this is the largest bandwidth ratio ever reported for an MMIC Marchand balun.

Why it matters

OpenAlex reports 19 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

In this paper, we demonstrate an ultra-wideband MMIC Marchand balun that utilizes a two-layer benzocyclobutene (BCB) GaAs MMIC process with a total of 4 metal layers. This multi-metal technology is built upon a standard GaAs HEMT technology with full compatibility. The fabricated balun achieved an approximately 11:1 bandwidth from 2 to 22 GHz, with less than 3-degree maximum phase imbalance, and less than 1 dB maximum amplitude imbalance. To our knowledge, this is the largest bandwidth ratio ever reported for an MMIC Marchand balun.

Key concepts: Balun, Monolithic microwave integrated circuit, Benzocyclobutene, Wideband, Electrical engineering, High-electron-mobility transistor, Bandwidth (computing), Materials science

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
An Ultra-Wideband Balun Using Multi-Metal GaAs MMIC Technology — Research Paper | ScholarLens