2012Unpublished venueRequires access

A multi-rate SerDes transceiver for IEEE 1394b applications

Longfei Wei, Jinyue Ji, Haiqi Liu, Qiang Li

Open publisher page 2 citations

Abstract

This paper presents an implementation of multi-rate SerDes transceiver for IEEE 1394b applications. Simple and effective pre-emphasis and equalizer circuits are used at transmitter and receiver, respectively. A phase interpolator based clock and data recovery circuit with optimized linearity is also described. With an on-chip fully integrated phase locked loop, the transceiver works at data rates of 100Mb/s, 400Mb/s and 800Mb/s, supporting three different operating modes of S100b, S400b and S800b for IEEE 1394b. The chip has been fabricated using 0.13μm technology. The die area of transceiver is 2.9*1.6 mm2including bonding pads and the total power dissipation is 284 mW with 1.2V and 3.3V supply voltages.

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What this paper is about

This paper presents an implementation of multi-rate SerDes transceiver for IEEE 1394b applications. Simple and effective pre-emphasis and equalizer circuits are used at transmitter and receiver, respectively. A phase interpolator based clock and data recovery circuit with optimized linearity is also described. With an on-chip fully integrated phase locked loop, the transceiver works at data rates of 100Mb/s, 400Mb/s and 800Mb/s, supporting three different operating modes of S100b, S400b and S800b for IEEE 1394b. The chip has been fabricated using 0.13μm technology. The die area of transceiver is 2.9*1.6 mm2including bonding pads and the total power dissipation is 284 mW with 1.2V and 3.3V supply voltages.

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Available abstract

This paper presents an implementation of multi-rate SerDes transceiver for IEEE 1394b applications. Simple and effective pre-emphasis and equalizer circuits are used at transmitter and receiver, respectively. A phase interpolator based clock and data recovery circuit with optimized linearity is also described. With an on-chip fully integrated phase locked loop, the transceiver works at data rates of 100Mb/s, 400Mb/s and 800Mb/s, supporting three different operating modes of S100b, S400b and S800b for IEEE 1394b. The chip has been fabricated using 0.13μm technology. The die area of transceiver is 2.9*1.6 mm2including bonding pads and the total power dissipation is 284 mW with 1.2V and 3.3V supply voltages.

Key concepts: SerDes, Transceiver, Transmitter, Phase-locked loop, Chip, Computer science, Electronic engineering, Electrical engineering

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