Linear power amplifier based on 3-way Doherty amplifier with predistorter
Bumjae Shin, Jeonghyeon Cha, Jangheon Kim, Young Yun Woo, Jaehyok Yi, Bumman Kim
Abstract
Bumjae Shin, Jeonghyeon Cha, Jangheon Kim, Young Yun Woo, Jaehyok Yi, Bumman Kim
Abstract
This paper presents a 3-way Doherty amplifier with predistorter (PD) for a repeater application. It is implemented using three 60 Watts PEP silicon LDMOSFETs and tested using two-tone and one- and two-carrier down-link WCDMA signals. For the two-carrier downlink WCDMA signal, the amplifier provides -49.1 dBc adjacent-channel-leakage-ratio (ACLR) and 10.3% power-added efficiency (PAE) at an output power 40 dBm which is an improvement of 8.5 dBc in linearity and 2% in efficiency compared to a similar class-AB amplifier.
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This paper presents a 3-way Doherty amplifier with predistorter (PD) for a repeater application. It is implemented using three 60 Watts PEP silicon LDMOSFETs and tested using two-tone and one- and two-carrier down-link WCDMA signals. For the two-carrier downlink WCDMA signal, the amplifier provides -49.1 dBc adjacent-channel-leakage-ratio (ACLR) and 10.3% power-added efficiency (PAE) at an output power 40 dBm which is an improvement of 8.5 dBc in linearity and 2% in efficiency compared to a similar class-AB amplifier.
Key concepts: Doherty amplifier, Amplifier, Adjacent channel, dBc, Linear amplifier, Electrical engineering, Electronic engineering, RF power amplifier