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Spectral responses of silicon solar cells at low temperature

Henry W. Brandhorst, R. E. Hart

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Abstract

the problem lies in the diffused region or the front contact. The purpose of the work described in this paper was to measure the spectral responses of selected cells at low tem- peratures in order to help determine the region of the cell responsible for the abrupt loss of short circuit current with decreasing temperature. The cells used in this work were selected from those described in reference 5. One ion implanted cell and one diffused junction cell each showing good low temperature performance were selected. Also included was a cell with a Schottky barrier at the rear contact and a ceM with a flat spot on the I-V curve and a simultaneous loss in short circuit current at low temperatures. EXPERDBNTAL PROCEDURE The cells used in this study were typical of those in current production and being supplied for spacecraft applications. The dimens ions were 2 cm

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What this paper is about

the problem lies in the diffused region or the front contact. The purpose of the work described in this paper was to measure the spectral responses of selected cells at low tem- peratures in order to help determine the region of the cell responsible for the abrupt loss of short circuit current with decreasing temperature. The cells used in this work were selected from those described in reference 5. One ion implanted cell and one diffused junction cell each showing good low temperature performance were selected. Also included was a cell with a Schottky barrier at the rear contact and a ceM with a flat spot on the I-V curve and a simultaneous loss in short circuit current at low temperatures. EXPERDBNTAL PROCEDURE The cells used in this study were typical of those in current production and being supplied for spacecraft applications. The dimens ions were 2 cm

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Available abstract

the problem lies in the diffused region or the front contact. The purpose of the work described in this paper was to measure the spectral responses of selected cells at low tem- peratures in order to help determine the region of the cell responsible for the abrupt loss of short circuit current with decreasing temperature. The cells used in this work were selected from those described in reference 5. One ion implanted cell and one diffused junction cell each showing good low temperature performance were selected. Also included was a cell with a Schottky barrier at the rear contact and a ceM with a flat spot on the I-V curve and a simultaneous loss in short circuit current at low temperatures. EXPERDBNTAL PROCEDURE The cells used in this study were typical of those in current production and being supplied for spacecraft applications. The dimens ions were 2 cm

Key concepts: Silicon, Materials science, Schottky barrier, Current (fluid), Solar cell, Optoelectronics, Work (physics), Temperature measurement

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