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2009•Unpublished venueRequires access

Reliability challenges for advanced copper interconnects: Electromigration and time-dependent dielectric breakdown (TDDB)

J. Gambino, Tom C. Lee, Fen Chen, Timothy D. Sullivan

Open publisher page 28 citations

Abstract

Ensuring the reliability of Cu interconnects becomes more challenging as device dimensions shrink, because of the smaller dimensions and because of the weaker mechanical properties of the low-k material. In this report, we will focus on electromigration and time dependent dielectric breakdown (TDDB) in Cu interconnect structures.

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What this paper is about

Ensuring the reliability of Cu interconnects becomes more challenging as device dimensions shrink, because of the smaller dimensions and because of the weaker mechanical properties of the low-k material. In this report, we will focus on electromigration and time dependent dielectric breakdown (TDDB) in Cu interconnect structures.

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OpenAlex reports 28 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

Ensuring the reliability of Cu interconnects becomes more challenging as device dimensions shrink, because of the smaller dimensions and because of the weaker mechanical properties of the low-k material. In this report, we will focus on electromigration and time dependent dielectric breakdown (TDDB) in Cu interconnect structures.

Key concepts: Electromigration, Time-dependent gate oxide breakdown, Reliability (semiconductor), Dielectric strength, Materials science, Copper interconnect, Interconnection, Dielectric

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