SiC technologies for future energy electronics
Tsunenobu Kimoto
Abstract
Tsunenobu Kimoto
Abstract
High-efficiency electric power conversion is an essential technology for energy saving. The efficiency of power converters/inverters relies on the performance of power semiconductor devices employed in the power electronic systems. Silicon carbide (SiC) is a newly-emerging wide bandgap semiconductor, by which high-voltage, low-loss power devices can be realized owing to its superior properties. This paper reviews recent progress in SiC material and device technologies for power device applications. Benefits and remaining issues of SiC power devices are highlighted.
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High-efficiency electric power conversion is an essential technology for energy saving. The efficiency of power converters/inverters relies on the performance of power semiconductor devices employed in the power electronic systems. Silicon carbide (SiC) is a newly-emerging wide bandgap semiconductor, by which high-voltage, low-loss power devices can be realized owing to its superior properties. This paper reviews recent progress in SiC material and device technologies for power device applications. Benefits and remaining issues of SiC power devices are highlighted.
Key concepts: Silicon carbide, Power semiconductor device, Power electronics, Wide-bandgap semiconductor, Converters, Power module, Electrical engineering, Semiconductor device