Microstrip Varactor-Tuned Millimeter-Wave IMPATT Diode Oscillators
E.J. Denlinger, Jerome Rosen, E. Mykietyn, E.C. McDermott
Abstract
E.J. Denlinger, Jerome Rosen, E. Mykietyn, E.C. McDermott
Abstract
Varactor-tuned millimeter-wave IMPATT diode oscillators in microstrip form using chip-mounted diodes are described. A nearly level output power of 28 /spl plusmn/ 8 mW was achieved over a 6-GHz tuning range. Tunable bandwidths as high as 8 GHz with 6-26 mW of power were obtained from a single source. P-type epitaxial silicon IMPATT diodes were used for both the active device and the tuning varactor functions.
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Varactor-tuned millimeter-wave IMPATT diode oscillators in microstrip form using chip-mounted diodes are described. A nearly level output power of 28 /spl plusmn/ 8 mW was achieved over a 6-GHz tuning range. Tunable bandwidths as high as 8 GHz with 6-26 mW of power were obtained from a single source. P-type epitaxial silicon IMPATT diodes were used for both the active device and the tuning varactor functions.
Key concepts: Varicap, IMPATT diode, Extremely high frequency, Optoelectronics, Diode, Materials science, Microstrip, Electrical engineering