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High Voltage Complementary Epi Free LDMOS Module with 70 V PLDMOS for a 0.25 μm SiGe:C BiCMOS Platform

R. Sorge, A. Fischer, K.‐E. Ehwald, R. Barth, P. M. Ostrovsky, R. Pliquett, Katrin Schulz, D. Bolze, P. Schley, D. Schmidt, H.-E. Wulf, H. Grutzediek, J. Scheerer, P. Hartmetz

Open publisher page 3 citations

Abstract

We demonstrate the integration of a low-cost, high-voltage complementary LDMOS module with BVdss of -71V and 83V for the PLDMOS and the NLDMOS, respectively, into an advanced industrial 0.25 mum SiGe:C BICMOS process. The essential deep N-well for the high voltage PLDMOS is formed by a single 6MeV P implantation step. BVdss*ft of the NLDMOS accomplishes record values > 900 VGHz.

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What this paper is about

We demonstrate the integration of a low-cost, high-voltage complementary LDMOS module with BVdss of -71V and 83V for the PLDMOS and the NLDMOS, respectively, into an advanced industrial 0.25 mum SiGe:C BICMOS process. The essential deep N-well for the high voltage PLDMOS is formed by a single 6MeV P implantation step. BVdss*ft of the NLDMOS accomplishes record values > 900 VGHz.

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Available abstract

We demonstrate the integration of a low-cost, high-voltage complementary LDMOS module with BVdss of -71V and 83V for the PLDMOS and the NLDMOS, respectively, into an advanced industrial 0.25 mum SiGe:C BICMOS process. The essential deep N-well for the high voltage PLDMOS is formed by a single 6MeV P implantation step. BVdss*ft of the NLDMOS accomplishes record values > 900 VGHz.

Key concepts: LDMOS, BiCMOS, High voltage, Electrical engineering, Materials science, Voltage, Breakdown voltage, Transistor

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High Voltage Complementary Epi Free LDMOS Module with 70 V PLDMOS for a 0.25 μm SiGe:C BiCMOS Platform — Research Paper | ScholarLens