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Reflectivity Studies of Trion (X-) and Exciton (X) States in ZnSe/(Zn,Mg)(S,Se) QWs

Georgy Astakhov, В. П. Кочерешко, D. R. Yakovlev, Suris, R. A., W. Ossau

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Abstract

The oscillator strength of negatively charged exciton (trion) in ZnSe/(Zn,Mg)(S,Se) quantum-well structures with n-type modulation doping is studied by reflection spectroscopy as a function of electron concentration and temperature. The trion oscillator strength is found to increase linearly with increasing electron concentration up to 6 x 10(exp10) cm(exp-2). The effect of oscillator strength "shearing" between the exciton and trion states is observed. The value of the oscillator strength shearing is found to be not more than 20%.

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The oscillator strength of negatively charged exciton (trion) in ZnSe/(Zn,Mg)(S,Se) quantum-well structures with n-type modulation doping is studied by reflection spectroscopy as a function of electron concentration and temperature. The trion oscillator strength is found to increase linearly with increasing electron concentration up to 6 x 10(exp10) cm(exp-2). The effect of oscillator strength "shearing" between the exciton and trion states is observed. The value of the oscillator strength shearing is found to be not more than 20%.

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Available abstract

The oscillator strength of negatively charged exciton (trion) in ZnSe/(Zn,Mg)(S,Se) quantum-well structures with n-type modulation doping is studied by reflection spectroscopy as a function of electron concentration and temperature. The trion oscillator strength is found to increase linearly with increasing electron concentration up to 6 x 10(exp10) cm(exp-2). The effect of oscillator strength "shearing" between the exciton and trion states is observed. The value of the oscillator strength shearing is found to be not more than 20%.

Key concepts: Trion, Oscillator strength, Exciton, Doping, Quantum well, Reflectivity, Spectroscopy, Condensed matter physics

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