Reflectivity Studies of Trion (X-) and Exciton (X) States in ZnSe/(Zn,Mg)(S,Se) QWs
Georgy Astakhov, В. П. Кочерешко, D. R. Yakovlev, Suris, R. A., W. Ossau
Abstract
Georgy Astakhov, В. П. Кочерешко, D. R. Yakovlev, Suris, R. A., W. Ossau
Abstract
The oscillator strength of negatively charged exciton (trion) in ZnSe/(Zn,Mg)(S,Se) quantum-well structures with n-type modulation doping is studied by reflection spectroscopy as a function of electron concentration and temperature. The trion oscillator strength is found to increase linearly with increasing electron concentration up to 6 x 10(exp10) cm(exp-2). The effect of oscillator strength "shearing" between the exciton and trion states is observed. The value of the oscillator strength shearing is found to be not more than 20%.
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The oscillator strength of negatively charged exciton (trion) in ZnSe/(Zn,Mg)(S,Se) quantum-well structures with n-type modulation doping is studied by reflection spectroscopy as a function of electron concentration and temperature. The trion oscillator strength is found to increase linearly with increasing electron concentration up to 6 x 10(exp10) cm(exp-2). The effect of oscillator strength "shearing" between the exciton and trion states is observed. The value of the oscillator strength shearing is found to be not more than 20%.
Key concepts: Trion, Oscillator strength, Exciton, Doping, Quantum well, Reflectivity, Spectroscopy, Condensed matter physics