2003Unpublished venueRequires access

Flash memory built-in self-test using March-like algorithms

Jen-Chieh Yeh, Chi-Feng Wu, Kuo-Liang Cheng, Yung-Fa Chou, Chih-Tsun Huang, Cheng‐Wen Wu

Open publisher page 54 citations

Abstract

Flash memories are a type of non-volatile memory based on floating-gate transistors. The use of commodity and embedded flash memories are growing rapidly as we enter the system-on-chip (SOC) era. Conventional tests for flash memories are usually ad hoc-the test procedure is developed for a specific design. We propose improved March-like algorithms (i.e., March FT) for both bit-oriented and word-oriented flash memory; to cover the disturbance faults derived from the IEEE 1005 Standard, as well as conventional faults. A novel flash memory fault simulator is used to analyze and generate the test algorithms. In addition, we present BIST designs for two industrial flash memories. The area overhead is only about 3% for a medium-sized flash memory.

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What this paper is about

Flash memories are a type of non-volatile memory based on floating-gate transistors. The use of commodity and embedded flash memories are growing rapidly as we enter the system-on-chip (SOC) era. Conventional tests for flash memories are usually ad hoc-the test procedure is developed for a specific design. We propose improved March-like algorithms (i.e., March FT) for both bit-oriented and word-oriented flash memory; to cover the disturbance faults derived from the IEEE 1005 Standard, as well as conventional faults. A novel flash memory fault simulator is used to analyze and generate the test algorithms. In addition, we present BIST designs for two industrial flash memories. The area overhead is only about 3% for a medium-sized flash memory.

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Available abstract

Flash memories are a type of non-volatile memory based on floating-gate transistors. The use of commodity and embedded flash memories are growing rapidly as we enter the system-on-chip (SOC) era. Conventional tests for flash memories are usually ad hoc-the test procedure is developed for a specific design. We propose improved March-like algorithms (i.e., March FT) for both bit-oriented and word-oriented flash memory; to cover the disturbance faults derived from the IEEE 1005 Standard, as well as conventional faults. A novel flash memory fault simulator is used to analyze and generate the test algorithms. In addition, we present BIST designs for two industrial flash memories. The area overhead is only about 3% for a medium-sized flash memory.

Key concepts: Flash memory emulator, Flash memory, Flash file system, Computer science, Flash (photography), Universal memory, Embedded system, Non-volatile random-access memory

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