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2002•Unpublished venueRequires access

Factors influencing intermodulation distortion performance of a FET

D.R. Webster, G.R. Ataei, D.G. Haigh, R. Kaunisto

Open publisher page 14 citations

Abstract

This work describes some of the factors which influence the intermodulation distortion performance of a FET. These factors include bias point, voltage gain, sample to sample variation and gate length. The work also shows how it is sometimes possible to exploit these factors to minimise intermodulation distortion for a given device whilst maintaining output matching.

About this research paper

What this paper is about

This work describes some of the factors which influence the intermodulation distortion performance of a FET. These factors include bias point, voltage gain, sample to sample variation and gate length. The work also shows how it is sometimes possible to exploit these factors to minimise intermodulation distortion for a given device whilst maintaining output matching.

Why it matters

OpenAlex reports 14 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

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Method / approach

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Main findings

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Available abstract

This work describes some of the factors which influence the intermodulation distortion performance of a FET. These factors include bias point, voltage gain, sample to sample variation and gate length. The work also shows how it is sometimes possible to exploit these factors to minimise intermodulation distortion for a given device whilst maintaining output matching.

Key concepts: Intermodulation, Distortion (music), Nonlinear distortion, Sample (material), Electronic engineering, Work (physics), Matching (statistics), Computer science

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