2013•physica status solidi (RRL) - Rapid Research LettersRequires access

Temperature‐dependent emission shift and carrier dynamics in deep ultraviolet AlGaN/AlGaN quantum wells

Jianping Zeng, Wei Li, Jianchang Yan, Junxi Wang, Peipei Cong, Jinmin Li, Weiying Wang, Peng Jin, Zhanguo Wang

Abstract

Abstract Radiative and nonradiative processes in deep ultraviolet (DUV) AlGaN/AlGaN multiple quantum wells (MQWs) grown by LP‐MOCVD have been studied by means of deep ultraviolet time‐integrated photoluminescence (PL) and time‐resolved photoluminescence (TRPL) spectroscopy. As the temperature is increased, the peak energy of DUV‐AlGaN/AlGaN MQWs PL emission (Ep) exhibits a similarly anti‐S‐shaped behavior (blueshift – accelerated redshift – decelerated redshift): Ep increases in the temperature range of 5.9–20 K and decreases for 20–300 K, involving an accelerated redshift for 20–150 K and an opposite decelerated redshift for 150–300 K with temperature increase. Especially at high temperature as 300 K, the slope of the Ep redshift tends towards zero. This temperature‐induced PL shift is strongly affected by the change in carrier dynamics with increasing temperature. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

About this research paper

What this paper is about

Why it matters

OpenAlex reports 8 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Key concepts: Redshift, Photoluminescence, Blueshift, Ultraviolet, Atmospheric temperature range, Materials science, Spectroscopy, Metalorganic vapour phase epitaxy