Dechannelling analysis of damage in Si created by MeV Ti ions

The Rutherford backscattering/channelling technique of 2.1 MeV He ions has been used to study the damage distribution in Si irradiated with 1.0 MeV Ti ions to a dose of 5*10 14 ions cm -2 under 7 degrees and 60 degrees incidence. A dechannelling analysis of multiple scattering has been made. The longitudinal damage straggling and lateral damage spread are estimated. The values obtained are compared with transport of ions in matter. The results show that the differences between experimental and calculated values for longitudinal damage straggling and the lateral damage spread are 25% and 28%, respectively. Also, it is observed that the damage distribution shape under 60 degrees irradiation is found in good qualitative agreement with an earlier simulation.