Doping Diamond for Electronic Applications

Abstract Diamond exhibits extraordinary physical and chemical properties, many of which have already found application in tribology, thermal management, and optics. Furthermore, diamond is also a wide‐band‐gap semiconductor which, when doped, can lead to the realization of electronic and optoelectronic devices with exceptional properties. Diamond can now be doped p‐type, with boron, both during chemical vapor deposition (CVD) diamond film growth and by ion‐implantation, and n‐type, with phosphorus, during CVD growth. This paper reviews the current status of diamond doping and describes the electronic properties of the doped layers. Some potential applications of doped semiconducting diamond are described.