2006Unpublished venueRequires access

Suns-Voc and Minority Carrier Lifetime Measurements of III-V Tandem Solar Cells

Bhumika Chhabra, Sean Jacobs, Christiana B. Honsberg

Open publisher page 6 citations

Abstract

Quasi steady state photoconductance (QSS-PC) and the "Suns- Voc" technique have been extensively used for characterizing silicon solar cells. QSS-PC has been used to determine the minority carrier lifetime, saturation current and surface recombination velocity. In this paper, we use both techniques to measure III-V tandem solar cells and III-V material, demonstrating the utility of the Suns- Voc for tandem devices and the ability to apply the QSS-PC measurements to the III-V materials, including GaAs and GaN. PC1D modeling is used to explain the experimental results.

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What this paper is about

Quasi steady state photoconductance (QSS-PC) and the "Suns- Voc" technique have been extensively used for characterizing silicon solar cells. QSS-PC has been used to determine the minority carrier lifetime, saturation current and surface recombination velocity. In this paper, we use both techniques to measure III-V tandem solar cells and III-V material, demonstrating the utility of the Suns- Voc for tandem devices and the ability to apply the QSS-PC measurements to the III-V materials, including GaAs and GaN. PC1D modeling is used to explain the experimental results.

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OpenAlex reports 6 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

Quasi steady state photoconductance (QSS-PC) and the "Suns- Voc" technique have been extensively used for characterizing silicon solar cells. QSS-PC has been used to determine the minority carrier lifetime, saturation current and surface recombination velocity. In this paper, we use both techniques to measure III-V tandem solar cells and III-V material, demonstrating the utility of the Suns- Voc for tandem devices and the ability to apply the QSS-PC measurements to the III-V materials, including GaAs and GaN. PC1D modeling is used to explain the experimental results.

Key concepts: Suns in alchemy, Tandem, Saturation current, Carrier lifetime, Materials science, Optoelectronics, Silicon, Saturation (graph theory)

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