A. Osinsky, M. S. Shur, R. Gaška, Qiushi Chen
Abstract
The authors report the observation of electric breakdown in graded p-π-n GaN photodiodes. The breakdown is accompanied by microplasma formation. The photocurrent strongly increases at the breakdown voltages, demonstrating a potential use of these devices as avalanche photodiodes (APDs).
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The authors report the observation of electric breakdown in graded p-π-n GaN photodiodes. The breakdown is accompanied by microplasma formation. The photocurrent strongly increases at the breakdown voltages, demonstrating a potential use of these devices as avalanche photodiodes (APDs).
Key concepts: Avalanche photodiode, Breakdown voltage, Photocurrent, Optoelectronics, Microplasma, Avalanche diode, Materials science, APDS