2012IEEE Journal of Solid-State CircuitsRequires access

A Combined Series-Parallel Hybrid Envelope Amplifier for Envelope Tracking Mobile Terminal RF Power Amplifier Applications

Muhammad Hassan, L.E. Larson, Vincent Leung, P.M. Asbeck

Open publisher page 131 citations

Abstract

An improved envelope amplifier architecture for envelope tracking RF power amplifiers is presented, consisting of two switching amplifiers and one linear amplifier. The first switching amplifier and the linear amplifier provide wideband and high-efficiency operation, while the second switching amplifier provides a reduced bandwidth variable supply to the linear amplifier to further reduce power loss. The first switching amplifier and the linear amplifier are fabricated together in a 150 nm CMOS process, while the second switching amplifier is external. Measurements show a maximum average efficiency of 82% for a 10 MHz LTE signal with a 6 dB PAPR at 29.7 dBm output power and an SFDR of 63 dBc for a single tone of 5 MHz driving an 8 Ω load.

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What this paper is about

An improved envelope amplifier architecture for envelope tracking RF power amplifiers is presented, consisting of two switching amplifiers and one linear amplifier. The first switching amplifier and the linear amplifier provide wideband and high-efficiency operation, while the second switching amplifier provides a reduced bandwidth variable supply to the linear amplifier to further reduce power loss. The first switching amplifier and the linear amplifier are fabricated together in a 150 nm CMOS process, while the second switching amplifier is external. Measurements show a maximum average efficiency of 82% for a 10 MHz LTE signal with a 6 dB PAPR at 29.7 dBm output power and an SFDR of 63 dBc for a single tone of 5 MHz driving an 8 Ω load.

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Available abstract

An improved envelope amplifier architecture for envelope tracking RF power amplifiers is presented, consisting of two switching amplifiers and one linear amplifier. The first switching amplifier and the linear amplifier provide wideband and high-efficiency operation, while the second switching amplifier provides a reduced bandwidth variable supply to the linear amplifier to further reduce power loss. The first switching amplifier and the linear amplifier are fabricated together in a 150 nm CMOS process, while the second switching amplifier is external. Measurements show a maximum average efficiency of 82% for a 10 MHz LTE signal with a 6 dB PAPR at 29.7 dBm output power and an SFDR of 63 dBc for a single tone of 5 MHz driving an 8 Ω load.

Key concepts: Linear amplifier, RF power amplifier, Direct-coupled amplifier, Cascade amplifier, Power-added efficiency, Amplifier, Operational transconductance amplifier, Power bandwidth

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