Xiaodong Mu, Yujie J. Ding, Boon Siew Ooi, M. Hopkinson
Abstract
Using time-resolved pump-probe differential photoluminescence technique, exciton decay time was measured to significantly increase as temperature was increased in InAs quantum dots embedded in an InGaAs/GaAs quantum well.
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Using time-resolved pump-probe differential photoluminescence technique, exciton decay time was measured to significantly increase as temperature was increased in InAs quantum dots embedded in an InGaAs/GaAs quantum well.
Key concepts: Quantum dot, Exciton, Photoluminescence, Gallium arsenide, Recombination, Optoelectronics, Biexciton, Materials science