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X- and Ku-band internally matched packaged GaAs f.e.t.

H. Derewonko, M. Laviron, Jean‐François Lepage

Open publisher page 5 citations

Abstract

The design and performances of medium-power X- and Ku-band internally matched GaAs f.e.t.s are reported. With input-output v.s.w.r. lower than 2 : 1 over more than 20% bandwidth in the X-band and l0% in the Ku-band, 50 and 200 mW two-stage cascaded amplifiers have been realised with no matching circuit outside the packaged f.e.t. and with only one power supply.

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What this paper is about

The design and performances of medium-power X- and Ku-band internally matched GaAs f.e.t.s are reported. With input-output v.s.w.r. lower than 2 : 1 over more than 20% bandwidth in the X-band and l0% in the Ku-band, 50 and 200 mW two-stage cascaded amplifiers have been realised with no matching circuit outside the packaged f.e.t. and with only one power supply.

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Available abstract

The design and performances of medium-power X- and Ku-band internally matched GaAs f.e.t.s are reported. With input-output v.s.w.r. lower than 2 : 1 over more than 20% bandwidth in the X-band and l0% in the Ku-band, 50 and 200 mW two-stage cascaded amplifiers have been realised with no matching circuit outside the packaged f.e.t. and with only one power supply.

Key concepts: Ku band, Amplifier, Bandwidth (computing), V band, Electrical engineering, Gallium arsenide, Physics, Power (physics)

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