Thermoluminescence in GaAs

We have studied the temperature dependence of the luminescence of ion implanted GaAs between 10 K and 100 K. We found that in certain temperature ranges the luminescence increases with increasing temperature. We attribute these isolated increases in the luminescence intensity to the thermal excitation of carriers out of traps, that is to thermoluminescence. Model calculations which include thermally stimulated luminescence produce excellent agreement with the experimental data.