1996•Unpublished venueRequires access
A comparison of gettering in single- and multicrystalline silicon for solar cells
Bhushan Sopori, L. Jastrzȩbski, T. Y. Tan
Open publisher page 30 citations
Abstract
The differences in the impurity gettering between single and multicrystalline silicon are discussed. These differences arise from impurity-defect interactions that occur during thermal processing of multicrystalline material. A gettering model is proposed to explain the observed behaviour of gettering in multicrystalline cells.