W-Band RF MEMS Double and Triple-Stub Impedance Tuners
T. Vähä-Heikkilä, J. Varis, J. Tuovinen, Gabriel M. Rebeiz
Abstract
T. Vähä-Heikkilä, J. Varis, J. Tuovinen, Gabriel M. Rebeiz
Abstract
Reconfigurable integrated impedance tuners have been developed for W-Band on-wafer noise parameter and loadpull measurement applications. The impedance tuners are based on double and triple-stub topologies and employ 11 switched MEMS capacitors producing 2048 (2 11 ) different impedances. Measured ${\left\vert\Gamma_{MAX} \right\vert}$ for the double-stub tuner is 0.92 and 0.82 at 75 and 100 GHz from 110 measurements out of 2048 possible impedances, and 0.92 and 0.83 for the triple-stub tuner. To our knowledge, this represents the first W-band integrated impedance tuner to date.
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Reconfigurable integrated impedance tuners have been developed for W-Band on-wafer noise parameter and loadpull measurement applications. The impedance tuners are based on double and triple-stub topologies and employ 11 switched MEMS capacitors producing 2048 (2 11 ) different impedances. Measured ${\left\vert\Gamma_{MAX} \right\vert}$ for the double-stub tuner is 0.92 and 0.82 at 75 and 100 GHz from 110 measurements out of 2048 possible impedances, and 0.92 and 0.83 for the triple-stub tuner. To our knowledge, this represents the first W-band integrated impedance tuner to date.
Key concepts: Tuner, Stub (electronics), Electrical impedance, Electrical engineering, Impedance matching, Microelectromechanical systems, Capacitor, Materials science