2005•IEEE Transactions on Circuits and Systems II Analog and Digital Signal ProcessingRequires access

Monolithic large-signal transimpedance amplifier for use in multi-gigabit, short-range optoelectronic interconnect applications

Antonio Vilches, R Loga, Mohamad Rahal, Kristel Fobelets, Christos Papavassiliou, Trevor J. Hall

Abstract

A novel large-signal transimpedance amplifier front-end, intended for monolithic integration with a Si p-i-n diode and employing HBT-CMOS technology for use in short-range optoelectronic interconnects is proposed. Simulated bandwidth and gain are >4 Gbits/s and 43 dB/spl Omega/, respectively, while driving a 100-fF load to TTL voltage levels.

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Key concepts: Transimpedance amplifier, Gigabit, Optoelectronics, CMOS, Amplifier, Heterojunction bipolar transistor, Bandwidth (computing), Materials science