2003•Unpublished venueRequires access

A 1-Watt doubly balanced 5GHz flip-chip SiGe power amplifier

N. Tanzi, Jerald P. Dykstra, K. Hutchinson

Abstract

A doubly balanced 5GHz flip-chip SiGe power amplifier with Low Temperature Co-Fired Ceramic (LTCC) matching networks is described. A doubly balanced amplifier features two balanced amplifiers connected in a push-pull configuration using 180-degree hybrids. The amplifier achieves a saturated output power and power added efficiency (PAE) of 31.5dBm and 24% respectively. At its 1dB compression point, the amplifier delivers 29.6dBm to a 50/spl Omega/ load, and has a PAE of 18.5%. At 5GHz, the amplifier's small-signal gain is 20.6dB, with input and output return losses in excess of 10dB. The amplifier's 1dB power bandwidth is 700MHz.

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Key concepts: Amplifier, RF power amplifier, Direct-coupled amplifier, Power-added efficiency, Linear amplifier, Electrical engineering, Power bandwidth, Cascade amplifier