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2006•IEEE Photonics Technology LettersRequires access

High Power Photodiode Wafer Bonded to Si Using Au With Improved Responsivity and Output Power

Ning Li, Hao Chen, Ning Duan, Mingguo Liu, S. Demiguel, R. Sidhu, A.L. Holmes, Joe C. Campbell

Open publisher page 27 citations

Abstract

High power photodiodes wafer bonded to Si using a gold intermediate layer were demonstrated. A fabricated 20-mum-diameter photodiode exhibited a bandwidth of ~18 GHz, a large-signal saturation-current of ~50 mA, and a peak responsivity of ~1 A/W. Both the responsivity and the saturation current of the Au-bonded photodiode were improved compared to the photodiode with the same structure on InP substrate

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What this paper is about

High power photodiodes wafer bonded to Si using a gold intermediate layer were demonstrated. A fabricated 20-mum-diameter photodiode exhibited a bandwidth of ~18 GHz, a large-signal saturation-current of ~50 mA, and a peak responsivity of ~1 A/W. Both the responsivity and the saturation current of the Au-bonded photodiode were improved compared to the photodiode with the same structure on InP substrate

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Available abstract

High power photodiodes wafer bonded to Si using a gold intermediate layer were demonstrated. A fabricated 20-mum-diameter photodiode exhibited a bandwidth of ~18 GHz, a large-signal saturation-current of ~50 mA, and a peak responsivity of ~1 A/W. Both the responsivity and the saturation current of the Au-bonded photodiode were improved compared to the photodiode with the same structure on InP substrate

Key concepts: Responsivity, Photodiode, Materials science, Optoelectronics, Wafer, Saturation current, Saturation (graph theory), Bandwidth (computing)

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