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Versatile medium ion implanter EXCEED2300V

Hiroshi Fujisawa, Takeshi Matsumoto, M. Nakaya, Takashi Yamashita, Naoki Miyamoto, Keiko Miyabayashi, T. Kobayashi, Yutaka Yamamoto, M. Nakamura, Tsutomu Nagayama, T. Kinoyama, K. Iwasawa, N. Nagai, Masayuki Naito, T. Ikejiri, Nariaki Hamamoto, Shigeki Sakai, Masayasu Tanjyo

Open publisher page 2 citations

Abstract

New dopant species, such as indium and antimony, are needed for the modem semiconductor manufacturing processes. We have developed a new ion implanter capable of implanting single charge In and Sb up to 200keV, which enhances the versatility of modern doping process like halo and pocket implantation. This versatile ion implanter EXCEED2300V has new beam line components with field proven technologies inherited from EXCEED2300H which ensure the precise implant such as no energy contaminant implantation, precise parallel beam implantation. In this paper, the detailed machine performance is reviewed.

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What this paper is about

New dopant species, such as indium and antimony, are needed for the modem semiconductor manufacturing processes. We have developed a new ion implanter capable of implanting single charge In and Sb up to 200keV, which enhances the versatility of modern doping process like halo and pocket implantation. This versatile ion implanter EXCEED2300V has new beam line components with field proven technologies inherited from EXCEED2300H which ensure the precise implant such as no energy contaminant implantation, precise parallel beam implantation. In this paper, the detailed machine performance is reviewed.

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Available abstract

New dopant species, such as indium and antimony, are needed for the modem semiconductor manufacturing processes. We have developed a new ion implanter capable of implanting single charge In and Sb up to 200keV, which enhances the versatility of modern doping process like halo and pocket implantation. This versatile ion implanter EXCEED2300V has new beam line components with field proven technologies inherited from EXCEED2300H which ensure the precise implant such as no energy contaminant implantation, precise parallel beam implantation. In this paper, the detailed machine performance is reviewed.

Key concepts: Ion implantation, Dopant, Doping, Materials science, Indium, Optoelectronics, Semiconductor, Ion beam

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