2011IEEE Transactions on Semiconductor ManufacturingRequires access

An Efficient Simulation System for Inclined UV Lithography Processes of Thick SU-8 Photoresists

Zai‐Fa Zhou, Qing‐An Huang, Zhen Zhu, Weihua Li

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Abstract

A 2-D simulation system based on a 2-D dynamic cellular automata method, integrating aerial image simulation, exposure simulation, post-exposure bake simulation, and development simulation modules is presented for inclined ultraviolet (UV) lithography processes of thick photoresists such as SU-8 photoresists. To verify the simulation system, a series of experiments have been performed for SU-8 2000 series photoresists under UV source with 365 nm (2.6 mW/cm2) radiation. The simulation results demonstrate to be in agreement with the experimental results. This is useful to optimize the inclined UV lithography processes of SU-8 photoresists, and to accurately design and control the dimensions of some SU-8 microstructures.

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What this paper is about

A 2-D simulation system based on a 2-D dynamic cellular automata method, integrating aerial image simulation, exposure simulation, post-exposure bake simulation, and development simulation modules is presented for inclined ultraviolet (UV) lithography processes of thick photoresists such as SU-8 photoresists. To verify the simulation system, a series of experiments have been performed for SU-8 2000 series photoresists under UV source with 365 nm (2.6 mW/cm2) radiation. The simulation results demonstrate to be in agreement with the experimental results. This is useful to optimize the inclined UV lithography processes of SU-8 photoresists, and to accurately design and control the dimensions of some SU-8 microstructures.

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Available abstract

A 2-D simulation system based on a 2-D dynamic cellular automata method, integrating aerial image simulation, exposure simulation, post-exposure bake simulation, and development simulation modules is presented for inclined ultraviolet (UV) lithography processes of thick photoresists such as SU-8 photoresists. To verify the simulation system, a series of experiments have been performed for SU-8 2000 series photoresists under UV source with 365 nm (2.6 mW/cm2) radiation. The simulation results demonstrate to be in agreement with the experimental results. This is useful to optimize the inclined UV lithography processes of SU-8 photoresists, and to accurately design and control the dimensions of some SU-8 microstructures.

Key concepts: Lithography, Aerial image, Ultraviolet, Materials science, Resist, Photoresist, Cellular automaton, Extreme ultraviolet lithography

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