2010•Chinese Physics BRequires access

A multilevel nano-scale interconnection RLC delay model

Zhangming Zhu, Xiu Li-Ping, Yang Yin-Tang

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Abstract

Based on the multilevel interconnections temperature distribution model and the RLC interconnection delay model of the integrate circuit, this paper proposes a multilevel nano-scale interconnection RLC delay model with the method of numerical analysis, the proposed analytical model has summed up the influence of the configuration of multilevel interconnections, the via heat transfer and self-heating effect on the interconnection delay, which is closer to the actual situation. Delay simulation results show that the proposed model has high precision within 5% errors for global interconnections based on the 65 nm CMOS interconnection and material parameter, which can be applied in nanometer CMOS system chip computer-aided design.

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What this paper is about

Based on the multilevel interconnections temperature distribution model and the RLC interconnection delay model of the integrate circuit, this paper proposes a multilevel nano-scale interconnection RLC delay model with the method of numerical analysis, the proposed analytical model has summed up the influence of the configuration of multilevel interconnections, the via heat transfer and self-heating effect on the interconnection delay, which is closer to the actual situation. Delay simulation results show that the proposed model has high precision within 5% errors for global interconnections based on the 65 nm CMOS interconnection and material parameter, which can be applied in nanometer CMOS system chip computer-aided design.

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Available abstract

Based on the multilevel interconnections temperature distribution model and the RLC interconnection delay model of the integrate circuit, this paper proposes a multilevel nano-scale interconnection RLC delay model with the method of numerical analysis, the proposed analytical model has summed up the influence of the configuration of multilevel interconnections, the via heat transfer and self-heating effect on the interconnection delay, which is closer to the actual situation. Delay simulation results show that the proposed model has high precision within 5% errors for global interconnections based on the 65 nm CMOS interconnection and material parameter, which can be applied in nanometer CMOS system chip computer-aided design.

Key concepts: Interconnection, RLC circuit, CMOS, Computer science, Electronic engineering, Scale (ratio), Chip, Topology (electrical circuits)

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