1989•Journal of Crystal GrowthOpen access

Temperature dependence of silicon doping of GaAs by SiH4 and Si2H6 in atmospheric pressure metalorganic chemical vapour deposition

P.R. Hageman, Xiao Tang, M.H.J.M. de Croon, L.J. Giling

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Key concepts: Disilane, Chemical vapor deposition, Silane, Doping, Silicon, Chemistry, Atmospheric pressure, Atmospheric temperature range

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