Investigation of the Effect of Operating Temperature on Electrical Characteristics of A-Si: H/a-SiGe: H Hetero-Structure Solar Cells

In this work the temperature dependence of the electrical behavior of the amorphous silicon thin film hetero-structure solar cells such as potential and electric field and the effect of temperature on the recombination rate and photo-generation rate, through the cell is investigated. Also the effect of the various p-layer doping concentrations with temperature variation on the electrical characteristic of the solar cell such as short circuit current, open circuit voltage and efficiency are studied in this work. Based on the results optimum structures for single and double junction amorphous silicon solar cells are obtained. After optimizing the parameters of i-layer and p-layer of solar cell a double-junction solar cell with JSC=265A/m2, VOC=1.13V, FF=0.795, and efficiency of 23.5% has been achieved at T=300 K.