2010•SID Symposium Digest of Technical PapersRequires access

69.3: Amorphous Oxide TFT Backplane for Large Size AMOLED TVs

Yeon Gon Mo, Minkyu Kim, Chul Kyu Kang, Jong Han Jeong, Yong Sung Park, Chaun Gi Choi, Hye Dong Kim, Sang Soo Kim

Abstract

Abstract Amorphous oxide thin film transistor (TFT) arrays have been developed as TFT backplanes for large size active‐matrix organic light emitting diode (AMOLED) displays. An amorphous IGZO (Indium Gallium Zinc Oxide) bottom gate TFT with an etch‐stop layer (ESL) delivered excellent electrical performance with field‐ effect mobility of 21 cm 2 /V‐s, an on/off ratio of >10 8 , and subthreshold slope (SS) of 0.29V/dec. A full color 19‐inch AMOLED display has been developed using the amorphous IGZO TFT backplane.

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Key concepts: AMOLED, Thin-film transistor, Backplane, Materials science, Oxide thin-film transistor, Amorphous solid, Optoelectronics, Active matrix