2002Unpublished venueRequires access

Ionized metal plasma deposition of titanium and titanium nitride for deep contact applications

Bongyoung Yoo, young ho Park, H.-D. Lee, J.H. Kim, H.-K. Kang, M.Y. Lee, H.G. Wang, K.-S. Lee, J. van Gogh, C.H. Chu, Shugang Lai, B. McClintock, Sergio Edelstein, F. Chen

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Abstract

The characteristics of ionized metal plasma PVD Ti-TiN films have been investigated for the application as a liner for small deep contacts. Compared to collimated Ti-TiN films, the bottom coverage of IMP Ti-TiN is more than two times higher at high aspect ratio contacts. With substrate bias, IMP Ti and IMP TiN show different crystallographic orientation behaviour. When applied to deep contacts, excellent contact resistance was achieved with thinner IMP Ti films, which is only one third of the thickness of collimated Ti films. Adopting the IMP TiN liner also represents a lower contact resistance than collimated TiN liners.

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What this paper is about

The characteristics of ionized metal plasma PVD Ti-TiN films have been investigated for the application as a liner for small deep contacts. Compared to collimated Ti-TiN films, the bottom coverage of IMP Ti-TiN is more than two times higher at high aspect ratio contacts. With substrate bias, IMP Ti and IMP TiN show different crystallographic orientation behaviour. When applied to deep contacts, excellent contact resistance was achieved with thinner IMP Ti films, which is only one third of the thickness of collimated Ti films. Adopting the IMP TiN liner also represents a lower contact resistance than collimated TiN liners.

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Available abstract

The characteristics of ionized metal plasma PVD Ti-TiN films have been investigated for the application as a liner for small deep contacts. Compared to collimated Ti-TiN films, the bottom coverage of IMP Ti-TiN is more than two times higher at high aspect ratio contacts. With substrate bias, IMP Ti and IMP TiN show different crystallographic orientation behaviour. When applied to deep contacts, excellent contact resistance was achieved with thinner IMP Ti films, which is only one third of the thickness of collimated Ti films. Adopting the IMP TiN liner also represents a lower contact resistance than collimated TiN liners.

Key concepts: Tin, Titanium nitride, Materials science, Titanium, Collimated light, Plasma, Contact resistance, Nitride

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