Motoo Mizumura, Kenzo Wada, S. Aihara, Isao Haga
Abstract
A new type of highly stabilized 20 GHz GaAs FET oscillator using a dielectric resonator has been developed. Not using any frequency multiplying device, it features compactness, simple configuration and high reliability. A frequency stability of within ±15ppm (0°C~+50°C) was obtained at 20 GHz.
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A new type of highly stabilized 20 GHz GaAs FET oscillator using a dielectric resonator has been developed. Not using any frequency multiplying device, it features compactness, simple configuration and high reliability. A frequency stability of within ±15ppm (0°C~+50°C) was obtained at 20 GHz.
Key concepts: Resonator, Dielectric resonator, Dielectric, Optoelectronics, Materials science, Gallium arsenide, Reliability (semiconductor), Electrical engineering