А. Yu. Yushchenko, E. A. Monastyrev, G. I. Ayzenshtat, V. G. Bozhkov, Alexander V. Akimov
Abstract
The paper presents the design and performance of broadband monolithic GaAs p-i-n diode limiter. MIC has low-signal insertion loss. The leakage power of the limiter is about 16.5 dBm and it can handle CW power level up to 37 dBm.
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The paper presents the design and performance of broadband monolithic GaAs p-i-n diode limiter. MIC has low-signal insertion loss. The leakage power of the limiter is about 16.5 dBm and it can handle CW power level up to 37 dBm.
Key concepts: Limiter, dBm, Diode, Materials science, Broadband, Leakage (economics), Insertion loss, Optoelectronics