Variation of Carrier Removal Rate with Irradiation Dose in Fast-Pile Neutron Irradiated n-Si

Float-zone and Czochralski phosphorus-doped n-Si samples with a resistivity ϱ < 40 Ωcm were investigated after irradiation with various doses of fast-pile neutrons. Equations for the calculation of average and instantaneous carrier removal rates by clusters and point defects in the conducting matrix of high-resistivity Si have been derived. Only the calculation of defect recharges in the space-charge regions of clusters allowed to determine the temperature dependence of the effective carrier concentration. Simple defect build-up kinetics for deep acceptor levels have been calculated with the assumption that apart from the V2-, E-, and G16 centres interstitial Si was also accumulated in the conducting matrix.