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2007•Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and PhenomenaRequires access

Progress in extreme ultraviolet interferometric and holographic lithography

Artak Isoyan, Yangchun Cheng, Fayin Jiang, John Paul Wallace, F. Cerrina, Srinivas B. Bollepalli

Open publisher page 14 citations

Abstract

The Center for Nanotechnology has developed an advanced beamline dedicated to nanopatterning using the radiation from a new undulator on the Aladdin storage ring at the Synchrotron Radiation Center of the University of Wisconsin-Madison. Computer generated holograms and transmission interferometric gratings were fabricated and tested on the new extreme ultraviolet (EUV) exposure system. The authors have developed an accurate model, based on Fresnel-Kirchhoff integral diffraction theory, to analyze performance of real EUV interferometric and holographic lithography systems.

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What this paper is about

The Center for Nanotechnology has developed an advanced beamline dedicated to nanopatterning using the radiation from a new undulator on the Aladdin storage ring at the Synchrotron Radiation Center of the University of Wisconsin-Madison. Computer generated holograms and transmission interferometric gratings were fabricated and tested on the new extreme ultraviolet (EUV) exposure system. The authors have developed an accurate model, based on Fresnel-Kirchhoff integral diffraction theory, to analyze performance of real EUV interferometric and holographic lithography systems.

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Available abstract

The Center for Nanotechnology has developed an advanced beamline dedicated to nanopatterning using the radiation from a new undulator on the Aladdin storage ring at the Synchrotron Radiation Center of the University of Wisconsin-Madison. Computer generated holograms and transmission interferometric gratings were fabricated and tested on the new extreme ultraviolet (EUV) exposure system. The authors have developed an accurate model, based on Fresnel-Kirchhoff integral diffraction theory, to analyze performance of real EUV interferometric and holographic lithography systems.

Key concepts: Extreme ultraviolet lithography, Undulator, Holography, Extreme ultraviolet, Optics, Beamline, Lithography, Synchrotron radiation

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