2001Physical Review LettersRequires access

Dynamical Offset Charges in Single-Electron Transistors

D. E. Grupp, T. Zhang, G. J. Dolan, Ned S. Wingreen

Open publisher page 20 citations

Abstract

To explain our observations of anomalous transport through a single-electron transistor we propose a model where a charged two-level system is coupled to the device. The state of the two-level system depends self-consistently on the state of the transistor, leading to stable gate-voltage-controlled configurations of the offset charge at low bias, and dynamical switching behavior at high bias. This phenomenon may impact applications of single electronics, as well as fundamental measurements in quantum dots.

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What this paper is about

To explain our observations of anomalous transport through a single-electron transistor we propose a model where a charged two-level system is coupled to the device. The state of the two-level system depends self-consistently on the state of the transistor, leading to stable gate-voltage-controlled configurations of the offset charge at low bias, and dynamical switching behavior at high bias. This phenomenon may impact applications of single electronics, as well as fundamental measurements in quantum dots.

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OpenAlex reports 20 citations for this work. Citation counts describe recorded attention and do not establish research quality.

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Available abstract

To explain our observations of anomalous transport through a single-electron transistor we propose a model where a charged two-level system is coupled to the device. The state of the two-level system depends self-consistently on the state of the transistor, leading to stable gate-voltage-controlled configurations of the offset charge at low bias, and dynamical switching behavior at high bias. This phenomenon may impact applications of single electronics, as well as fundamental measurements in quantum dots.

Key concepts: Transistor, Offset (computer science), Electron, Physics, Quantum dot, Coulomb blockade, Electronics, Threshold voltage

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