2009•Solid-State ElectronicsRequires access

A 65 nm test structure for SRAM device variability and NBTI statistics

Thomas Fischer, Ettore Amirante, Peter Huber, Karl Hofmann, Martin Ostermayr, Doris Schmitt‐Landsiedel

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Key concepts: Static random-access memory, Negative-bias temperature instability, Transistor, Materials science, Threshold voltage, Stress (linguistics), Optoelectronics, Gaussian

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