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2015•Unpublished venueRequires access

Optimization of GaAsSb/InAlAs/InGaAs tunnel diodes for millimeter-wave detection

Mikhail A. Patrashin, Norihiko Sekine, Akifumi Kasamatsu, Issei Watanabe, Iwao Hosako, Tsuyoshi Takahashi, Masaru Sato, Yasuhiro Nakasha, Naoki Hara

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Abstract

We evaluated optimal voltage sensitivity (SV) and noise equivalent power (NEP) of GaAsSb/InAlAs/InGaAs tunnel diode detectors in 220-330 GHz band at room temperature. The NEP values have strong dependence on the diode mesa size. With increasing the device area from 0.8×0.8μm2to 1.4×1.4μm2, the estimated minimum NEP improved from 200pW/Hz1/2to 80pW/Hz1/2.

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What this paper is about

We evaluated optimal voltage sensitivity (SV) and noise equivalent power (NEP) of GaAsSb/InAlAs/InGaAs tunnel diode detectors in 220-330 GHz band at room temperature. The NEP values have strong dependence on the diode mesa size. With increasing the device area from 0.8×0.8μm2to 1.4×1.4μm2, the estimated minimum NEP improved from 200pW/Hz1/2to 80pW/Hz1/2.

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Available abstract

We evaluated optimal voltage sensitivity (SV) and noise equivalent power (NEP) of GaAsSb/InAlAs/InGaAs tunnel diode detectors in 220-330 GHz band at room temperature. The NEP values have strong dependence on the diode mesa size. With increasing the device area from 0.8×0.8μm2to 1.4×1.4μm2, the estimated minimum NEP improved from 200pW/Hz1/2to 80pW/Hz1/2.

Key concepts: Diode, Physics, Optoelectronics, Materials science

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