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2007•physica status solidi (b)Requires access

Numerical simulation of spin accumulation and tunnel magnetoresistance in single electron tunnelling junctions with a nonmagnetic nanoparticle

H. Wang, Seiji Mitani, Kōki Takanashi, Hiroshi Imamura

Open publisher page 3 citations

Abstract

Abstract For the device designs showing a large tunnel magnetoresistance (TMR) due to spin accumulation, spin dependent single electron tunnelling in double tunnel junctions with a nonmagnetic nanoparticle is investigated by numerical simulations in the sequential tunnelling regime. We show that the bias voltage dependecnce of TMR ratio takes a maximum value just above the Coulomb threshold voltage and the optimal junction parameters for a large TMR ratio are obtained. We also show that the maximum value of the TMR ratio almost agrees with 2P2/(1+P2) where P is the spin polarization of ferromagnetic electrodes. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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What this paper is about

Abstract For the device designs showing a large tunnel magnetoresistance (TMR) due to spin accumulation, spin dependent single electron tunnelling in double tunnel junctions with a nonmagnetic nanoparticle is investigated by numerical simulations in the sequential tunnelling regime. We show that the bias voltage dependecnce of TMR ratio takes a maximum value just above the Coulomb threshold voltage and the optimal junction parameters for a large TMR ratio are obtained. We also show that the maximum value of the TMR ratio almost agrees with 2P2/(1+P2) where P is the spin polarization of ferromagnetic electrodes. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Available abstract

Abstract For the device designs showing a large tunnel magnetoresistance (TMR) due to spin accumulation, spin dependent single electron tunnelling in double tunnel junctions with a nonmagnetic nanoparticle is investigated by numerical simulations in the sequential tunnelling regime. We show that the bias voltage dependecnce of TMR ratio takes a maximum value just above the Coulomb threshold voltage and the optimal junction parameters for a large TMR ratio are obtained. We also show that the maximum value of the TMR ratio almost agrees with 2P2/(1+P2) where P is the spin polarization of ferromagnetic electrodes. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Key concepts: Quantum tunnelling, Tunnel magnetoresistance, Condensed matter physics, Magnetoresistance, Tunnel junction, Electron, Coulomb blockade, Ferromagnetism

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