Resistance and mesoscopic fluctuations in graphene

Abstract We investigate the mesoscopic resistance fluctuations (MRFs) that, as we showed previously, cause the exponentially decaying low‐temperature resistance anomaly in graphene monolayers. We determine autocorrelation functions and power spectra for the MRFs, finding that the fluctuations have shorter periods (as a function of gate voltage) near the neutrality point. We also investigate the origin of the sharp increase of the resistance of graphene on a Si/SiO2 substrate at higher temperatures and at higher charge carrier densities. We show that a very good description of this increase is given by scattering by the experimentally observed graphene zone‐boundary phonons of energy 160 meV (that cause current saturation in carbon nanotubes) and by lower energy phonons (70 meV) that make a smaller contribution. magnified image An example of mesoscopic resistance fluctuations as a function of gate voltage measured from the neutrality point (with resistance at temperature 51 K subtracted).