1998Review of Scientific InstrumentsRequires access

Development of compact microwave ion source for low-energy application

Yasuhito Gotoh, Yoshikazu Fujimori, Hisahiko Kubo, Hiroshi Tsuji, J. Ishikawa

Open publisher page 8 citations

Abstract

A compact microwave ion source for the research of low-energy ion beam application such as ion beam assisted deposition or ion beam sputtering has been developed. The developed ion source is based on the previously reported compact microwave ion source, which was developed for higher-energy extraction. In order to extract the ions with a lower energy, it is necessary to lower the plasma density. The present ion source possesses a plasma expansion cup in order to make the plasma thinner. As a consequence of the thinner plasma, the extractable current becomes lower than that of the thicker plasma, thus the source has multiple extraction apertures. Current–voltage characteristics of the ion source were measured with an extraction system with 37 apertures and the extraction gap of 1.5 mm. At the voltage of 500 V, the current of the extraction electrode decreased rapidly and it was shown that at this voltage, an optimum ion optics was achieved. The argon ion current of 0.4 mA with the energy of 500 eV was extracted. The gas pressure in the processing chamber could be reduced to 5×10−4 Pa.

About this research paper

What this paper is about

A compact microwave ion source for the research of low-energy ion beam application such as ion beam assisted deposition or ion beam sputtering has been developed. The developed ion source is based on the previously reported compact microwave ion source, which was developed for higher-energy extraction. In order to extract the ions with a lower energy, it is necessary to lower the plasma density. The present ion source possesses a plasma expansion cup in order to make the plasma thinner. As a consequence of the thinner plasma, the extractable current becomes lower than that of the thicker plasma, thus the source has multiple extraction apertures. Current–voltage characteristics of the ion source were measured with an extraction system with 37 apertures and the extraction gap of 1.5 mm. At the voltage of 500 V, the current of the extraction electrode decreased rapidly and it was shown that at this voltage, an optimum ion optics was achieved. The argon ion current of 0.4 mA with the energy of 500 eV was extracted. The gas pressure in the processing chamber could be reduced to 5×10−4 Pa.

Why it matters

OpenAlex reports 8 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

A compact microwave ion source for the research of low-energy ion beam application such as ion beam assisted deposition or ion beam sputtering has been developed. The developed ion source is based on the previously reported compact microwave ion source, which was developed for higher-energy extraction. In order to extract the ions with a lower energy, it is necessary to lower the plasma density. The present ion source possesses a plasma expansion cup in order to make the plasma thinner. As a consequence of the thinner plasma, the extractable current becomes lower than that of the thicker plasma, thus the source has multiple extraction apertures. Current–voltage characteristics of the ion source were measured with an extraction system with 37 apertures and the extraction gap of 1.5 mm. At the voltage of 500 V, the current of the extraction electrode decreased rapidly and it was shown that at this voltage, an optimum ion optics was achieved. The argon ion current of 0.4 mA with the energy of 500 eV was extracted. The gas pressure in the processing chamber could be reduced to 5×10−4 Pa.

Key concepts: Ion source, Ion beam deposition, Materials science, Ion, Ion gun, Ion beam, Plasma, Sputtering

Related papers

Back to paper searchBrowse research topicsOriginal source
Development of compact microwave ion source for low-energy application — Research Paper | ScholarLens