2009•Applied Physics LettersRequires access

Linewidth properties of active-passive coupled monolithic InGaAs semiconductor ring lasers

Muhan Choi, Tomoko Tanaka, Satoshi Sunada, Takahisa Harayama

Abstract

We report linewidth properties of active-passive coupled monolithic InGaAs semiconductor ring lasers with various length of passive waveguide. It is experimentally confirmed that the linewidth of the lasers is proportional to the square of the ratio of the length of active part of the cavity over the total length of the cavity. The lasers are applicable for communication and sensing devices, which need the narrow linewidth.

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Key concepts: Laser linewidth, Semiconductor laser theory, Optoelectronics, Laser, Materials science, Semiconductor, Gallium arsenide, Active layer