ScholarLens Back to search
1975•Health PhysicsRequires access

Response of LiF to 1.0–4.0 keV Electrons

Donald E. Barber, Richard H. Moore, Trevor M. Hutchinson

Open publisher page 8 citations

Abstract

Extruded LiF chips were irradiated in a scanning electron microscope (SEM) with electron energies of 1.0, 2.0 or 4.0 keV. The LiF chips were irradiated at several electron currents to deliver doses over the range of 5–1200 krads. The average dose, D, over the depth of electron penetration was determined in rads. The thermoluminescence produced by the electrons was compared with that produced by 137Cs gamma-rays. The sensitivity of the LiF to electrons was found to be 0.2–0.4 times its sensitivity to 137Cs gamma-rays. This indicates that thermoluminescence in LiF is produced with remarkable efficiency even at low electron energies provided the electrons reach the LiF.

About this research paper

What this paper is about

Extruded LiF chips were irradiated in a scanning electron microscope (SEM) with electron energies of 1.0, 2.0 or 4.0 keV. The LiF chips were irradiated at several electron currents to deliver doses over the range of 5–1200 krads. The average dose, D, over the depth of electron penetration was determined in rads. The thermoluminescence produced by the electrons was compared with that produced by 137Cs gamma-rays. The sensitivity of the LiF to electrons was found to be 0.2–0.4 times its sensitivity to 137Cs gamma-rays. This indicates that thermoluminescence in LiF is produced with remarkable efficiency even at low electron energies provided the electrons reach the LiF.

Why it matters

OpenAlex reports 8 citations for this work. Citation counts describe recorded attention and do not establish research quality.

Key contribution

A contribution statement is not available in the OpenAlex record.

Method / approach

Method details are not available in the OpenAlex metadata.

Main findings

Findings are not separately available in the OpenAlex metadata.

Limitations

Limitations are not available in the OpenAlex metadata.

Applications

Application details are not available in the OpenAlex metadata.

Available abstract

Extruded LiF chips were irradiated in a scanning electron microscope (SEM) with electron energies of 1.0, 2.0 or 4.0 keV. The LiF chips were irradiated at several electron currents to deliver doses over the range of 5–1200 krads. The average dose, D, over the depth of electron penetration was determined in rads. The thermoluminescence produced by the electrons was compared with that produced by 137Cs gamma-rays. The sensitivity of the LiF to electrons was found to be 0.2–0.4 times its sensitivity to 137Cs gamma-rays. This indicates that thermoluminescence in LiF is produced with remarkable efficiency even at low electron energies provided the electrons reach the LiF.

Key concepts: Thermoluminescence, Electron, Irradiation, Gamma ray, Scanning electron microscope, Atomic physics, Radiochemistry, Materials science

Related papers

Related paper 1Related paper 2Related paper 3
Back to paper searchBrowse research topicsOriginal source
Response of LiF to 1.0–4.0 keV Electrons — Research Paper | ScholarLens