X-ray diffraction of nonuniform GexSi1−x/Si strained-layer superlattices
J. H. Li, Z. H., Shaoguo Cui
Abstract
J. H. Li, Z. H., Shaoguo Cui
Abstract
GexSi1−x/Si strained-layer superlattices have been studied by means of double-crystal x-ray rocking curves. Double peaks in the same order superlattice reflections or strong oscillation fringes near the superlattice peaks were observed in the rocking curves for two different samples. Good agreement between theoretical simulations and their experimental counterparts were obtained. Our results demonstrate that these phenomena are attributed to serious local variation in layer thickness and composition.
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GexSi1−x/Si strained-layer superlattices have been studied by means of double-crystal x-ray rocking curves. Double peaks in the same order superlattice reflections or strong oscillation fringes near the superlattice peaks were observed in the rocking curves for two different samples. Good agreement between theoretical simulations and their experimental counterparts were obtained. Our results demonstrate that these phenomena are attributed to serious local variation in layer thickness and composition.
Key concepts: Superlattice, X-ray crystallography, Diffraction, Condensed matter physics, Materials science, Oscillation (cell signaling), X-ray, Layer (electronics)